备用零件
Price @ 1000
$ 3.47
Stock
77,872
194,948
Authorized Distributors
0
6
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vds)
60 V
60 V
Continuous Drain Current (ID)
70 A
70 A
Threshold Voltage
-
4 V
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7.4 nF
7.4 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2015-11-20
LTD Date2016-05-20
描述
由其分销商提供的 Vishay IRFP064 的描述。
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A) | MOSFET N-CH 60V 70A TO-247AC
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Single N-Channel HEXFET Power MOSFET, Dr; Case style: TO-247; Current, Id cont: 70A @ 25°C; Current, Idm pulse: 520A; Power, Pd: 300W @ 25°C; Resistance, Rds on: 0.009R; Transistor polarity: N Channel; Voltage, Vds max: 60V; Manufacturer, abbreviated: IR; Pitch, lead: 5.45mm; Power dissipation: 300W @ 25°C; Temperature, current: 25°C; Temperature, power rating: 25°C; Transistors, number of: 1
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)70 A
Current Rating70 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time190 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation300 W
Rds On Max9 mΩ
Rise Time190 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)60 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm