供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-06-11
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
相关零件
STMicroelectronicsSTB7NK80ZT4
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a D2PAK package
VishayIRFBC30STRLPBF
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 3.6A D2PAK
描述
由其分销商提供的 Vishay IRFBE30STRLPBF 的描述。
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK T/R
IRFBE30S Series N-Channel 800 V 3 Ohm Surface Mount Power Mosfet - TO-263
POWER MOSFET Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.1 A
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)800 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation125 W
Rds On Max3 Ω
Rise Time33 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time12 ns