供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay IRF9630SPBF 的描述。
In a Pack of 5, P-Channel MOSFET, 6.5 A, 200 V, 3-Pin D2PAK Vishay IRF9630SPBF
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220
Mosfet P-Channel 200V Rohs Compliant: No
Vishay PMOS, Vds=200 V, 6.5 A, D2PAK (TO-263), , 3
P CH MOSFET, -200V, 6.5A, D2-PAK
POWER MOSFET Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance800 mΩ
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max800 mΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.02 mm