Infineon IRF630NSTRLPBF

Name: Infineon IRF630NSTRLPBF
Brand: Infineon
SKU: IRF630NSTRLPBF

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

$ 1.63

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF630NSTRLPBF	0	16	Bulk			1.720	1.630	1.630	10h
Farnell	3	IRF630NSTRLPBF	0	1	Cut Tape	1.418*	1.078*	1.078*	1.078*	1.078*	17h
Microchip USA		IRF630NS	210	600	Tray				1.115	1.115	12h
Component Stockers USA		IRF630NSTRLPBF	3,742			0.530	0.530	0.500	0.530	0.530	2d
Win Source	2	WS-IRF630NS	15,324	105					0.378	0.378	19h

数据表和文档

下载 Infineon IRF630NSTRLPBF 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

Farnell

Newark

iiiC

Jameco

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRF630NSTRLPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRF630NSTRLPBF

InfineonIRF630NSPBF

Price @ 1000

$ 1.63

$ 1.33

Stock

564,243

117,962

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

9.3 A

Threshold Voltage

4 V

Rds On Max

300 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

82 W

Input Capacitance

575 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

描述

由其分销商提供的 Infineon IRF630NSTRLPBF 的描述。

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK

Win Source

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

Verical

IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

Jameco

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

Distrelec