价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRF840ASTRRPBFCT-ND | 344 | 1 | Cut Tape | ||||||||
| TME | IRF840ASTRRPBF | 0 | 800 | 9h | ||||||||
| Avnet | IRF840ASTRRPBF | 0 | 800 | 1d | ||||||||
| TTI Europe | IRF840ASTRRPBF | 0 | 800 | Tape & Reel | 41m | |||||||
| TTI Asia | IRF840ASTRRPBF | 联系方式 | 13h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-07-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
相关零件
STMicroelectronicsSTB10NK60ZT4
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
描述
由其分销商提供的 Vishay IRF840ASTRRPBF 的描述。
MOSFET N-CH 500V 8A D2PAK / Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 500V 8A D2PAK
125W(Tc) 30V 4V@ 250¦ÌA 38nC@ 10 V 1N 500V 850m¦¸@ 4.8A,10V 8A 1.018nF@25V D2PAK,TO-263 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CHANNEL 500V
new, original packaged
NCHAN, SMD-220, 500V, 8A
TO-263 MOSFETs ROHS
D2-PAK (TO-263)
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max850 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm