价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | IRF840STRLPBF | 800 | 800 | Tape & Reel | ||||||||
| Rutronik | HVMOS1137 | 800 | 800 | 7h | ||||||||
| DigiKey | IRF840STRLPBFCT-ND | 495 | 1 | Cut Tape | ||||||||
| TME | IRF840STRLPBF | 0 | 1 | 22h | ||||||||
| TTI | IRF840STRLPBF | 0 | 800 | Tape & Reel | 3h |
数据表和文档
下载 Vishay IRF840STRLPBF 的数据表和制造商文档。
官方数据表12 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTB10NK60ZT4
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
描述
由其分销商提供的 Vishay IRF840STRLPBF 的描述。
Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 500V 8A D2PAK
3.1W(Ta),125W(Tc) 20V 4V@ 250¦ÌA 63nC@ 10 V 1N 500V 850m¦¸@ 4.8A,10V 8A 1.3nF@25V TO-263 4.83mm
MOSFET Devices; VISHAY; IRF840STRLPBF; 500 V; 8 A; 20 V; 3.1 W
500V 8A 3.1W 850m´Î@10V4.8A 4V@250Ã×A N Channel TO-263-2 MOSFETs ROHS
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time49 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm