供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 8 months ago)
相关零件
描述
由其分销商提供的 Vishay IRF740ALPBF 的描述。
Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262
N CHANNEL MOSFET, 400V, 10A, I2-PAK; Tra; N CHANNEL MOSFET, 400V, 10A, I2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Vo
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max550 mΩ
Resistance550 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time24 ns
Turn-On Delay Time10 ns
Dimensions
Height9.65 mm
Length10.41 mm
Width4.7 mm