供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 9 months ago)
描述
由其分销商提供的 Vishay IRF530STRRPBF 的描述。
Single N-Channel 100 V 3.7 W 26 nC Silicon Surface Mount Mosfet - TO-263-3
TRANS MOSFET N-CH 100V 14A 3-PIN D2PAK
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
3.7W(Ta)，88W(Tc) 20V 4V@ 250µA 26nC@ 10 V 1individualNChannel 100V 160mΩ@ 8.4A,10V 14A 670pF@25V D2PAK，TO-263 SMD mount
NCHAN, SMD-220, 100V IRF530STRRPBF
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Operating Temperature175 °C
Max Power Dissipation88 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max160 mΩ
Rise Time34 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm