数据表和文档
下载 onsemi FQB17N08TM 的数据表和制造商文档。
官方数据表9 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
描述
由其分销商提供的 onsemi FQB17N08TM 的描述。
MOSFET N-CH 80V 16.5A D2PAK
Power Field-Effect Transistor, 16.5A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 80V N-Channel QFET Logic Level
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)16.5 A
Current Rating16.5 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance450 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max115 mΩ
Rise Time60 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time4.8 ns
Voltage Rating (DC)80 V
数据表和文档
下载 onsemi FQB17N08TM 的数据表和制造商文档。
官方数据表9 年前