Vishay 2N7002-T1-E3

Name: Vishay 2N7002-T1-E3
Brand: Vishay
SKU: 2N7002-T1-E3

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

$ 0.468

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics		2N7002-T1-E3	16	1		0.463	0.394	0.394	0.394	0.394
TTI Asia		2N7002-T1-E3	联系方式							0.065	3d
TTI Europe		2N7002-T1-E3	0	3K	Tape & Reel						3d
Farnell	2	2N7002-T1-E3	0	5	Cut Tape		0.551*	0.540*	0.517*	0.506*	9h
element14 APAC	2	2N7002-T1-E3	0	5	Cut Tape		0.613*	0.602*	0.577*	0.565*	22h

数据表和文档

下载 Vishay 2N7002-T1-E3 的数据表和制造商文档。

Upverter

Technical Drawing10 页6 年前

Newark

Farnell

Garrett

库存历史记录

3 个月趋势:

-12.95%

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Vishay2N7002-T1-E3

onsemi2N7002LT1G

Price @ 1000

$ 0.468

$ 0.06

Stock

577,539

168,693,169

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

115 mA

Threshold Voltage

2.1 V

1 V

Rds On Max

7.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 mW

225 mW

Input Capacitance

50 pF

供应链

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-02-22

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2024-12-21

LTD Date2025-06-21

描述

由其分销商提供的 Vishay 2N7002-T1-E3 的描述。

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

Fly-Wing Technology

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 Ohm, SOT-23, 3 Pins, Surface Mount

Avnet

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 115MA SOT23

Win Source

N-CHANNEL ENHANCEMENT-MODE MOS FET Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

ComSIT Distribution GmbH

N Channel Mosfet, 60V, 115Ma To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:200Mw Rohs Compliant: No |Vishay 2N7002-T1-E3.

Newark

MOSFET,N CH,60V,0.115A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:115mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Gfs Min:80mA/V; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:200mW; Power Dissipation Pd:200mW; Pulse Current Idm:800mA; SMD Marking:72; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

element14 APAC