供应链
Lifecycle StatusProduction (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
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SI5936DU-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,6 A,30V,8-PIN POWERPAK CHIPFET
描述
由其分销商提供的 Texas Instruments CSD87502Q2 的描述。
Transistor MOSFET Array Dual N-CH 30V 5A 6-Pin WSON T/R
30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection 6-WSON -55 to 150
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
30V 5A 2.3W 32.4mΩ@10V,4A 2 N-Channel DFN-6L-EP(2x2) MOSFETs ROHS
MOSFET 30V Dual N-Ch Common Drain NexFET
High Frequency Synchronous Power Module
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TEXAS INSTRUM
- TI Texas Instruments
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance353 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max32.4 mΩ
Turn-Off Delay Time12 ns
Turn-On Delay Time3 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm