Texas Instruments CSD16301Q2

Name: Texas Instruments CSD16301Q2
Brand: Texas Instruments
SKU: CSD16301Q2

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm 6-WSON -55 to 150

$ 0.201

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics	2	CSD16301Q2	12,552	1		0.604	0.338	0.278	0.201	0.146
Rochester Electronics		CSD16301Q2	580					0.182	0.151	0.134	21h
Verical		CSD16301Q2	12,552	9			0.338	0.278	0.201	0.146
DigiKey	3	296-25260-1-ND	45,511	1	Cut Tape	0.800	0.496	0.320	0.219	0.219
Mouser		595-CSD16301Q2	29,266	1	Tape & Reel	0.750	0.460	0.299	0.204	0.153

数据表和文档

下载 Texas Instruments CSD16301Q2 的数据表和制造商文档。

Texas Instruments

Datasheet11 页11 年前

Official datasheet0 页0 年前

Datasheet11 页14 年前

Augswan

Farnell

Newark

iiiC

库存历史记录

3 个月趋势:

+30.93%

CAD 模型

从我们值得信赖的合作伙伴处下载 Texas Instruments CSD16301Q2 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	符号封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 1 week ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)

工程资源

查看 Texas Instruments CSD16301Q2 的评估工作包和参考设计。

参考设计

Compact: efficient: 24-V input auxiliary power supply reference design for servo drives

Intel IMVP6+ Atom CPU Core Power Reference Design

Low Power Wearable TX Reference Design

Reference Design for 6-Cell EV/HEV Integrated Battery Monitor and Protector w/Passive Balancing

Reference Design for 6-Cell HEV/EV Integrated Battery Monitor and Protector w/Passive Balancing</

USB-C DFP + 5V2A Power Bank With Input Fast Charger Reference Design

USB-C DFP+ USB-A Power Bank with Input & Output Fast Charger Reference Design

描述

由其分销商提供的 Texas Instruments CSD16301Q2 的描述。

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm 6-WSON -55 to 150

Texas Instruments

TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount

Jak Electronics

Trans MOSFET N-CH 25V 5A 6-Pin SON T/R

Avnet

25V 5A 24m´Î@8V4A 2.3W 1.55V@250Ã×A N Channel WSON-6 MOSFETs ROHS

Dasenic

5 A 25 V 0.034 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 5A I(D), 25V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

MOSFET N-Channel NexFET Power MOSFET

Digi-ic_SMART PIONEER

Texas Instruments NMOS NexFET, Vds=25 V, 5 A, WSON, , 6

Unikeyic (ICkey)

Mosfet, n Ch,25V,5A, son-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Rohs Compliant: Yes |Texas Instruments CSD16301Q2

Newark