备用零件
Price @ 1000
$ 0.52
$ 0.143
Stock
968,010
338,591
Authorized Distributors
5
2
Mount
Surface Mount
-
Case/Package
SMD/SMT
-
Drain to Source Voltage (Vdss)
20 V
-
Continuous Drain Current (ID)
5.2 A
5.2 A
Threshold Voltage
600 mV
-
Rds On Max
30 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
740 pF
-
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-01
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2023-06-15
LTD Date2023-12-15
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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描述
由其分销商提供的 onsemi NTHS5404T1G 的描述。
Single N-Channel ChipFET™ Power MOSFET 20V 7.2A 30mΩ
NTHS5404T1G N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 20 V, 8-PIN CHIPFET
NTHS5404 Series 20 V 5.2 A 30 mOhm Single N-Channel MOSFET - ChipFET-8
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-323; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.2A; Package / Case:1206A; Power Dissipation Pd:2.5W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:20V; Voltage Vgs Max:600mV; Voltage Vgs Rds on Measurement:4.5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight4.535924 g
Technical
Continuous Drain Current (ID)5.2 A
Current Rating5.2 A
Drain to Source Breakdown Voltage25.1 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.3 W
Rds On Max30 mΩ
Rise Time7 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage600 mV
Turn-Off Delay Time50 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3.1 mm
Width1.7 mm