备用零件
Price @ 1000
$ 0.245
$ 0.245
Stock
248,649
124,810
124,810
Authorized Distributors
0
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220
TO-220
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
350 V
100 V
100 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
10 MHz
10 MHz
10 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
10
10
10
Power Dissipation
40 W
40 W
40 W
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2004-01-31
LTD Date2004-07-31
描述
由其分销商提供的 STMicroelectronics TIP49 的描述。
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR NPN 450V 1A TO-220
CAP CER 4.7UF 16V X5R RADIAL
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)450 V
Collector Emitter Breakdown Voltage350 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)350 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product10 MHz
hFE Min10
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation40 W
Transition Frequency10 MHz