备用零件
Price @ 1000
$ 0.263
$ 0.238
$ 0.238
Stock
643,720
462,753
462,753
Authorized Distributors
6
6
6
Mount
Through Hole
-
-
Case/Package
TO-220
TO-220-3
TO-220-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
100 V
-
-
Max Collector Current
3 A
3 A
3 A
Transition Frequency
3 MHz
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
1.2 V
1.2 V
hFE Min
10
10
10
Power Dissipation
40 W
2 W
2 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1989-06-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
描述
由其分销商提供的 STMicroelectronics TIP32C 的描述。
Bipolar (BJT) Single Transistor, PNP, 100 V, 3 A, 40 W, TO-220, Through Hole
100V 2W 10@3A,4V 3A PNP TO-220AB-3 Bipolar Transistors - BJT ROHS
Bipolar Transistors (BJT); TIP32C; STMICROELECTRONICS; PNP; 3; 100 V; 3 A
Trans GP BJT PNP 100V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, DARLINGTON, SI, PNP, AMPLIFIER, POWER, SWITCH, VO -100V, VI -5V, IO -3A
ST TIP32C TO220 100V PNP High Voltage Transistor
Power Bipolar, PNP, 4V, 375mA, TO-220, Tube
STMicroelectronics SCT
Power Transistor, TO-220AB, PNP, 100V
STMicroelectronics PNPTransistor, TO-220encapsulation, Through hole mounting, Maximum DC collector current-3 A, maximum collector-emission voltage-100 V
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: -3A; DC Current Gain hFE: 50hFE; Transistor Case Style:
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)-100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product3 MHz
hFE Min10
Max Collector Current3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation40 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)-100 V
Dimensions
Height19.68 mm
Length10.4 mm
Width4.6 mm