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描述
由其分销商提供的 STMicroelectronics STY139N65M5 的描述。
N-channel 650 V, 0.014 Ohm typ., 130 A MDmesh M5 Power MOSFET in Max247 package
STY139N65M5 N-CHANNEL MOSFET TRANSISTOR, 130 A, 710 V, 3-PIN MAX247
Power MOSFET, N Channel, 650 V, 130 A, 0.014 ohm, MAX-247, Through Hole
MOSFET, N-CH, 650V, 130A, MAX-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins247
Number of Terminals3
Technical
Continuous Drain Current (ID)130 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)710 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance15.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation625 W
Rds On Max17 mΩ
Resistance17 mΩ
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time295 ns
Turn-On Delay Time295 ns
Dimensions
Height24.6 mm
Length15.9 mm
Width5.3 mm