供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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描述
由其分销商提供的 STMicroelectronics STW70N60M2 的描述。
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247
Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh M2series, Vds=600 V, 68 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 600V, 68A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 68A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)68 A
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.2 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation450 W
Rds On Max40 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time155 ns
Turn-On Delay Time32 ns