供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-29
LTD Date2018-12-29
相关零件
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描述
由其分销商提供的 STMicroelectronics STW62NM60N 的描述。
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package
STW62NM60N N-channel MOSFET Transistor, 65 A, 600 V, 3-Pin TO-247
Trans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube
MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
Power Field-Effect Transistor, 55A I(D), 600V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)55 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance48 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.8 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation350 W
Rds On Max49 mΩ
Rise Time35 ns
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm