供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-10
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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描述
由其分销商提供的 STMicroelectronics STW56N60M2 的描述。
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247
STW56N60M2 N-CHANNEL MOSFET TRANSISTOR, 52 A, 650 V, 3-PIN TO-247
MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)52 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Breakdown Voltage50 V
Number of Channels1
Number of Elements1
Power Dissipation350 W
Rds On Max55 mΩ
Turn-Off Delay Time119 ns
Turn-On Delay Time18 ns
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm