STMicroelectronics STW56N60M2

Name: STMicroelectronics STW56N60M2
Brand: STMicroelectronics
SKU: STW56N60M2

N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

$ 4.661

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		STW56N60M2	320	1		10.740	9.500	7.030	6.220	6.220
DigiKey		497-15577-5-ND	521	1	Tube	9.570	9.570	5.609	4.102	3.973
TME	2	STW56N60M2	0	1		12.577*	10.539*	9.762*	7.902*	7.843*	19h
Avnet		STW56N60M2	0	600					4.024	3.814	8h
RS (Formerly Allied Electronics)		STW56N60M2	0	1	Bulk	27.230	26.690	23.140	19.060	19.060	23h

数据表和文档

下载 STMicroelectronics STW56N60M2 的数据表和制造商文档。

TME

Datasheet12 页13 年前

库存历史记录

3 个月趋势:

+1.02%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-10

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STW56N60M2 的描述。

N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

STMicroelectronics

Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247

Future Electronics

STW56N60M2 N-CHANNEL MOSFET TRANSISTOR, 52 A, 650 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

Farnell