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描述
由其分销商提供的 STMicroelectronics STW4N150 的描述。
N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247
Transistor MOSFET N-CH 1.5KV 4A 3-Pin (3+Tab) TO-247 Tube
N-CHANNEL 1500 V, 5 OHM, 4 A TO-247 POWERMESH POWER MOSFET Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, 1500V, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 1.5kV; On Resistance Rds(on): 7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipati
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage1.5 kV
Drain to Source Resistance7 Ω
Drain to Source Voltage (Vdss)1.5 kV
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage1.5 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation160 W
Rds On Max7 Ω
Resistance7 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)1.5 kV
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm