供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 STMicroelectronics STW32N65M5 的描述。
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247
Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET POWER MOSFET N-CH 650V 24 A
MOSFET N-CHANNEL 650V 24A TO247
STMICROELECTRONICS STW32N65M5 MOSFETS
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance119 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.32 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max119 mΩ
Resistance119 MΩ
Rise Time12 ns
Turn-Off Delay Time53 ns
Turn-On Delay Time53 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm