相关零件
STMicroelectronicsSTW26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
描述
由其分销商提供的 STMicroelectronics STW22NM60N 的描述。
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-247 Tube
MOSFET N-Channel 600V 16A TO247
Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 16A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time38 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max220 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time74 ns
Turn-On Delay Time11 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm