STMicroelectronics STU2NK100Z

Name: STMicroelectronics STU2NK100Z
Brand: STMicroelectronics
SKU: STU2NK100Z

N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package

$ 0.632

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Distributor		SKU		Min	Pkg
Verical	2	STU2NK100Z	6,000	3K						0.522
Arrow Electronics	2	STU2NK100Z	5,700	1		0.886	0.886	0.791	0.626	0.545
TME	2	STU2NK100Z	53	1		1.894	1.015	0.809	0.654	0.511	15h
DigiKey		497-12694-5-ND	942	1	Tube	2.140	2.140	0.966	0.728	0.565
Avnet		STU2NK100Z	0	3K						0.529	4h

数据表和文档

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Newark

Datasheet16 页20 年前

Datasheet23 页7 年前

TME

库存历史记录

3 个月趋势:

-9.69%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-05-17

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

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N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package

STMicroelectronics

MOSFET N-CH 1000V 1.85A IPAK / N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole I-PAK

Win Source

STU2NK100Z N-CHANNEL MOSFET TRANSISTOR, 1.85 A, 1000 V, 3-PIN TO-251

RS (Formerly Allied Electronics)

N-CHANNEL 1000 V-6.25 OHM-1.85 A-IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C

element14 APAC

Mosfet, N Ch, 1Kv, 1.85A, To-251; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1.85A; Tensión Drenaje-Fuente Vds:1Kv; Resistencia De Activación Rds(On):6.25Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STU2NK100Z

Newark