价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STU12N60M2 | 3,000 | 30 | Tube | ||||||||
| Avnet | STU12N60M2 | 0 | 3K | 3h | ||||||||
| Mouser | 511-STU12N60M2 | 2,951 | 1 | Tube | ||||||||
| HQonline | DS0077634 | 3,000 | 20 | >1w | ||||||||
| Microchip USA | STU12N60M2 | 361 | 3K | Tube | 7d |
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描述
由其分销商提供的 STMicroelectronics STU12N60M2 的描述。
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
N-Channel 600 V 450 mOhm Through Hole MDmesh M2 Power Mosfet - IPAK
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 9A IPAK
Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Input Capacitance538 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max450 mΩ
Schedule B8541290080