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描述
由其分销商提供的 STMicroelectronics STU13NM60N 的描述。
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
STU13NM60N N-channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-251
N-CHANNEL 600 VOLT, 280 MILLI OHM TYP., 11 AMP MDMESH II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max360 mΩ
Rise Time8 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm