供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-05-14
Lifecycle StatusProduction (Last Updated: 5 months ago)
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描述
由其分销商提供的 STMicroelectronics STT4P3LLH6 的描述。
P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package
P-Channel 30 V 56 mOhm SMT STripFET H6 DeepGate Power Mosfet - SOT23-6
Power MOSFET, P Channel, 30 V, 4 A, 0.048 ohm, SOT-23, Surface Mount
Trans MOSFET P-CH 30V 4A 6-Pin SOT-23 T/R
Mosfet, P-Ch, 30V, 4A, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Qualification:-Rohs Compliant: Yes |Stmicroelectronics STT4P3LLH6
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)4 A
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-30 V
Input Capacitance639 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max56 mΩ
Schedule B8541290080