供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-08-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
Diodes Inc.DMG6402LVT-7
Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LVT-7
Diodes Inc.DMP3065LVT-7
DMP Series 30 V 42 mOhm 1.6 W SMT P-Channel Enhancement Mode Mosfet - TSOT-26
描述
由其分销商提供的 onsemi FDC610PZ 的描述。
TRANSISTOR, P-CHANNEL, POWERTRENCH MOSFET, 30V, 4.9A, 42MOHM, SUPERSOT6
P-Channel PowerTrench® MOSFET, -30V, -4.9A, 42mΩ
P-Channel 30 V 42 mOhm 24 nC SMT PowerTrench Mosfet - SSOT-6
Power MOSFET, P Channel, 30 V, 4.9 A, 0.042 ohm, SuperSOT, Surface Mount
MOSFET, P CH, 30V, 0.0049A, SSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.2V; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SSOT; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
This Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)4.9 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.005 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max42 mΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage-2.2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm