备用零件
Price @ 1000
$ 0.29
Stock
197,864
195,496
Authorized Distributors
0
1
Mount
Through Hole
Through Hole
Case/Package
SOT-32-3
TO-126-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
400 V
400 V
Max Collector Current
2 A
2 A
Transition Frequency
-
-
Collector Emitter Saturation Voltage
1.5 V
-
hFE Min
8
8
Power Dissipation
45 W
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusObsolete (Last Updated: 4 weeks ago)
LTB Date2019-09-19
LTD Date2020-03-19
描述
由其分销商提供的 STMicroelectronics STT13005D-K 的描述。
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) SOT-32 Bag
High voltage fast-switching NPN power transistor
Ptd High Voltage Rohs Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min8
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation45 W