供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-10-03
LTD Date2019-04-03
相关零件
STMicroelectronicsSTS8DNF3LL
Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
描述
由其分销商提供的 STMicroelectronics STS9D8NH3LL 的描述。
Transistor MOSFET Array Dual N-CH 30V 8A/9A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 8A/9A 8-Pin SO N T/R
Power MOSFET Transistors Dual N Ch 30V 0.012Ohm 9A
Power Field-Effect Transistor, 8A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual N-channel 30V - 0.012Y - 9A SO-8
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time8.5 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance857 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingDigi-Reel®
Power Dissipation2 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time32 ns
Schedule B8541290080
Turn-Off Delay Time18 ns