Infineon IRF7907TRPBF

Name: Infineon IRF7907TRPBF
Brand: Infineon
SKU: IRF7907TRPBF

Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R

$ 0.467

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRF7907TRPBF	4,000	4K						0.315	2d
Newark	2	IRF7907TRPBF	9,364	1	Cut Tape	0.458	0.458	0.458	0.458	0.458
Arrow Electronics		IRF7907TRPBF	6,457	1		0.358	0.358	0.358	0.358	0.358
DigiKey	3	IRF7907TRPBFCT-ND	52,971	1	Cut Tape	1.560	0.985	0.654	0.467	0.428
Future Electronics	2	IRF7907TRPBF	0	4K	Tape & Reel					0.575

数据表和文档

下载 Infineon IRF7907TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页17 年前

iiiC

库存历史记录

3 个月趋势:

-15.83%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7907TRPBF 的描述。

Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R

Avnet Japan

Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

Infineon SCT

MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8

Newark

Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

Infineon

Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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