Infineon IRF7319PBF

Name: Infineon IRF7319PBF
Brand: Infineon
SKU: IRF7319PBF

Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

$ 0.603

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF7319PBF	72					0.356	0.295	0.263	23h
RS (Formerly Allied Electronics)	IRF7319PBF	0	1	Bulk	1.030	0.910	0.910	0.910	0.910	13h
Farnell	IRF7319PBF	0	5			0.928*	0.638*	0.445*	0.436*	1d
Win Source	WS-IRF7319PBF	14,980	95				0.531	0.412	0.412	1d
Worldway Electronics	IRF7319PBF	10,831	7	Tube		0.168	0.165	0.158	0.155	1d

数据表和文档

下载 Infineon IRF7319PBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet10 页21 年前

element14 APAC

TME

iiiC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-08-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7319PBF 的描述。

Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC Tube

Verical

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.5A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.5A; Cont Current Id P Channel:4.9A; Current Id Max:6.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:30A; Pulse Current Idm P Channel:30A; Row Pitch:6.3mm; SMD Marking:F7319; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

element14 APAC