Infineon IRF7311PBF

Name: Infineon IRF7311PBF
Brand: Infineon
SKU: IRF7311PBF

Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8

$ 0.74

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7311PBF	0	1	Bulk	0.830	0.740	0.740	0.740	0.740	12h
Farnell		IRF7311PBF	0	5			0.771*	0.543*	0.479*	0.469*	6h
Worldway Electronics		IRF7311PBF	14,761	7	Tube		0.407	0.394	0.374	0.374	20h
Voyager Components	3	IRF7311PBF-IR-1029	643			1.186	1.186	0.896	0.500	0.500	3h
SHENGYU ELECTRONICS		IRF7311PBF	10,521	1		0.153	0.150	0.150	0.140	0.130	3d

数据表和文档

下载 Infineon IRF7311PBF 的数据表和制造商文档。

IHS

Datasheet7 页22 年前

Datasheet8 页22 年前

TME

iiiC

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7311PBF 的描述。

Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC Tube

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:26A; Row Pitch:6.3mm; SMD Marking:IRF7311PBF; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC