供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
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Single N-Channel 30 V 31 mOhm 6 nC 1.4 W Silicon Surface Mount Mosfet - SOIC-8
描述
由其分销商提供的 STMicroelectronics STS4NF100 的描述。
MOSFET Transistor, N Channel, 4 A, 100 V, 60 mohm, 10 V
N-channel 100 V, Power Mosfet Power Field-Effect Transistor, 4A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2.5
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max70 mΩ
Rise Time45 ns
Schedule B8541290080
Turn-Off Delay Time49 ns
Turn-On Delay Time58 ns
Voltage Rating (DC)100 V
Dimensions
Height1.25 mm
Length5 mm
Width4 mm