供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-28
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Single N-Channel 30 V 31 mOhm 6 nC 1.4 W Silicon Surface Mount Mosfet - SOIC-8
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描述
由其分销商提供的 Diodes Inc. DMP3085LSS-13 的描述。
Mosfet, P-Ch, 30V, 3.8A, Soic Rohs Compliant: Yes |Diodes Inc. DMP3085LSS-13
Trans MOSFET P-CH 30V 3.8A 8-Pin SO T/R
MOSFET P-CH 30V 3.8A ENHANCEMENT SOIC8
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
MOSFET, P-CH, 30V, 3.8A, SOIC;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance563 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Rds On Max70 mΩ
Rise Time5 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time4.8 ns
Dimensions
Height1.5 mm
Length4.95 mm
Width3.95 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
合规声明