供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-03
LTD Date2013-11-02
相关零件
描述
由其分销商提供的 STMicroelectronics STS1DN45K3 的描述。
Dual N-Channel 450 V 3.8 Ohm SMT SuperMESH3 Power MosFet - SOIC-8
MOSFET 2N-CH 450V 0.5A 8SOIC / Trans MOSFET N-CH 450V 0.5A 8-Pin SO N T/R
Power Field-Effect Transistor, 0.5A I(D), 450V, 3.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 450V, 500mA, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):3.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage450 V
Drain to Source Resistance3.8 Ω
Drain to Source Voltage (Vdss)450 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)30 V
Input Capacitance150 pF
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage450 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingDigi-Reel®
Power Dissipation1.7 W
Rds On Max3.8 Ω
Resistance3.8 Ω
Threshold Voltage3.75 V