Infineon IRF7103PBF

Name: Infineon IRF7103PBF
Brand: Infineon
SKU: IRF7103PBF

Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8

$ 0.66

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7103PBF	0	1	Bulk	0.750	0.660	0.660	0.660	0.660	19h
Farnell		IRF7103PBF	0	5			0.636*	0.356*	0.245*	0.237*	6h
Win Source		WS-IRF7103PBF	43,820	180					0.238	0.220	7h
Worldway Electronics	2	IRF7103PBF	14,081	7	Tube		0.099	0.097	0.093	0.091	7h
ICPartonline		IRF7103PBF	23,849			0.328	0.312	0.296	0.279	0.263	>1wk

数据表和文档

下载 Infineon IRF7103PBF 的数据表和制造商文档。

IHS

Datasheet10 页16 年前

Datasheet9 页16 年前

Newark

TME

iiiC

Jameco

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-11-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7103PBF 的描述。

Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8

Maritex

Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC Tube

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):130mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:50V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F7103; Termination Type:SMD; Voltage Vds:50V; Voltage Vds Typ:50V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC