供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-12
Lifecycle StatusNRND (Last Updated: 2 months ago)
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Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
描述
由其分销商提供的 STMicroelectronics STS10DN3LH5 的描述。
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin SOIC T/R
Avnet Japan
Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET
MOSFET, DUAL N-CH, 30V, 10A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V
Mosfet, Dual N-Ch, 30V, 10A, Soic; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:10A; Continuous Drain Current Id P Channel:10A Rohs Compliant: Yes |Stmicroelectronics STS10DN3LH5
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time2.8 ns
Gate to Source Voltage (Vgs)22 V
Input Capacitance475 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max21 mΩ
Resistance21 MΩ
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time4 ns