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STMicroelectronicsSTQ1NK60ZR-AP
N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
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描述
由其分销商提供的 STMicroelectronics STQ1NK80ZR-AP 的描述。
N-channel 800 V, 13 Ohm typ., 0.3 A SuperMESH Zener protected Power MOSFET in a TO-92 package
N-Channel 1.6 V 365 ns ZENER Protected SuperMESH Mosfet Through Hole - TO-92
Power MOSFET, N Channel, 800 V, 300 mA, 16 ohm, TO-92, Through Hole
MOSFET N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Power Field-Effect Transistor, 0.3A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
N Ch Mosfet, Supermesh, 800V, 1A, To-92, Full Reel; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:300Ma; On Resistance Rds(On):13Ohm; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STQ1NK80ZR-AP
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-92
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)300 mA
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
PackagingTape and Reel
Power Dissipation3 W
Rds On Max16 Ω
Resistance16 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns