供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-02-03
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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描述
由其分销商提供的 onsemi FQN1N50CTA 的描述。
N-Channel Power MOSFET, QFET®, 500 V, 0.38 A, 6 Ω, TO-92
Transistor N-Channel Power MOSFET 500V 380mA TO-92
N-Channel 500 V 6 Ohm Through Hole Mosfet - TO-92-3
Trans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Ammo
500 V N-CHANNEL MOSFET Small Signal Field-Effect Transistor, 0.38A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N-CH, 500V, 0.38A, TO-226AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 380mA; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 4.6ohm; Rds(on) Test Vol; Available until stocks are exhausted
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Continuous Drain Current (ID)380 mA
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance265 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation890 mW
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation890 mW
Rds On Max173 mΩ
Resistance6 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height7.33 mm
Length5.2 mm
Width4.19 mm