供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-04-01
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描述
由其分销商提供的 STMicroelectronics STP80N6F6 的描述。
STP80N6F6 N-channel MOSFET Transistor, 110 A, 60 V, 3-Pin TO-220
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
120W(Tc) 20V 4.5V@ 250¦ÌA 122nC@ 10 V 1N 60V 5.8m¦¸@ 50A,10V 110A 7.48nF@25V TO-220 9.15mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.48 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation120 W
Rds On Max5.8 mΩ
Resistance5 mΩ
Schedule B8541290080
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm