供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-09
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2018-06-06
LTD Date2018-12-06
相关零件
InfineonIPP100N08S2L07AKSA1
MOSFET, N-CH, 75V, 100A, TO-220; Available until stocks are exhausted Alternative available
STMicroelectronicsSTP100N6F7
N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
描述
由其分销商提供的 STMicroelectronics STP90N6F6 的描述。
N-channel 60 V, 0.0057 Ohm typ., 90 A STripFET F6 Power MOSFET in a TO-220 package
Single N-Channel 60 V 136 W 74.9 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220 Tube
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance6.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.295 nF
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max6.8 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time73 ns
Turn-On Delay Time22 ns