STMicroelectronics STP7NM80

Name: STMicroelectronics STP7NM80
Brand: STMicroelectronics
SKU: STP7NM80

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220 package

Obsolete

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Distributor	SKU		Min	Pkg
Farnell	STP7NM80	0	1		3.599*	3.599*	2.772*	1.866*	1.693*	1h
Microchip USA	STP7NM80	331	600	Tray				1.400	1.400	2d
Win Source	WS-STP7NM80	58,000	25				1.882	1.578	1.578	4h
Worldway Electronics	STP7NM80	27,837	7	Tube		0.525	0.509	0.482	0.482	1d
Esaler Electronic	STP7NM80	1,000			1.751	1.734	1.717	1.700	1.683	2d

数据表和文档

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IHS

Datasheet24 页7 年前

Components Direct

TME

Future Electronics

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-09-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-01-10

LTD Date2021-07-10

描述

由其分销商提供的 STMicroelectronics STP7NM80 的描述。

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220 package

STMicroelectronics

STP7NM80 N-channel MOSFET Transistor, 6.5 A, 800 V, 3-Pin TO-220

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 800V, 6.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.25A; Drain Source Voltage Vds:800V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.5A; Package / Case:TO-220; Power Dissipation Pd:90W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC