供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
STMicroelectronicsSTP6N120K3
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package
描述
由其分销商提供的 STMicroelectronics STP7N95K3 的描述。
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, Zener-protected SuperMESH3; Power MOSFET
STP7N95K3 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 950 V, 3-PIN TO-220
Trans MOSFET N-CH 950V 7.2A 3-Pin(3+Tab) TO-220AB Tube
N Ch Power Mosfet, Supermesh3, 950V, 7.2A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Power Dissipation:150W; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP7N95K3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance1.35 Ω
Drain to Source Voltage (Vdss)950 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.031 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max1.35 Ω
Resistance1.35 Ω
Rise Time9 ns
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time14 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm