onsemi FQPF5N60C

Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F

Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube

600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.5ohm; Rds(on) Test V; Available until stocks are exhausted Alternative available

Mosfet, N, To-220F; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):2.5Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Onsemi FQPF5N60C.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.