供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-06
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2018-09-30
LTD Date2019-03-30
相关零件
STMicroelectronicsSTP62NS04Z
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N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
描述
由其分销商提供的 STMicroelectronics STP27N3LH5 的描述。
N-channel 30 V, 0.014 Ohm, 27 A, TO-220 STripFET (TM) V Power MOSFET
Trans MOSFET N-CH 30V 27A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 27A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Ch Power Mosfet, Stripfet, 30V, 27A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:through Hole; Threshold Voltage Vgs:2.5Vrohs Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.8 ns
Gate to Source Voltage (Vgs)22 V
Input Capacitance475 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time4 ns