供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-11-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-11
LTD Date2020-03-11
相关零件
STMicroelectronicsSTP95N3LLH6
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP105N3LL
N-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package
STMicroelectronicsSTP160N3LL
N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
描述
由其分销商提供的 Infineon IPP042N03LGXKSA1 的描述。
Transistor MOSFET N-CH 30V 70A 3-Pin TO-220 Tube
Avnet Japan
79W 20V 1V 18nC@ 4.5V 1N 30V 4.2m¦¸@ 10V 70A 2.9nF@ 15V TO-220 10mm*4.4mm*15.65mm
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
Infineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)70 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity500
Power Dissipation79 W
Rds On Max4.2 mΩ
Rise Time5.6 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time28 ns
Turn-On Delay Time7.4 ns
Dimensions
Height15.95 mm
Length10.36 mm
Width4.57 mm