价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-13552-5-ND | 413 | 1 | Tube | ||||||||
| Microchip USA | STP110N55F6 | 306 | 600 | Tray | 3h | |||||||
| Win Source | WS-STP110N55F6 | 6,990 | 18 | 12h | ||||||||
| Worldway Electronics | STP110N55F6 | 17,048 | 7 | Tube | 11h | |||||||
| Utmel Electronic | 2381-STP110N55F6 | 7,000 | Tube | 21h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-11-16
LTD Date2019-05-16
相关零件
STMicroelectronicsSTP120N4F6
N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
描述
由其分销商提供的 STMicroelectronics STP110N55F6 的描述。
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube
150W(Tc) 20V 4V@ 250¦ÌA 120nC@ 10 V 1N 55V 5.2m¦¸@ 60A,10V 110A 8.35nF@25V TO-220
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.35 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max5.2 mΩ