供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-30
Lifecycle StatusProduction (Last Updated: 1 month ago)
描述
由其分销商提供的 STMicroelectronics STN3N40K3 的描述。
N-channel 400 V, 3 Ohm, 1.8 A SuperMESH3(TM) Power MOSFET in SOT-223 package
STN3N40K3 N-channel MOSFET Transistor, 1.8 A, 400 V, 3-Pin SOT-223
Power MOSFET, N Channel, 400 V, 1.8 A, 3 ohm, SOT-223, Surface Mount
MOSFET, N CH, 400V, 1.8A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:400V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Pow
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.3 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance165 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation3.3 W
Rds On Max3.4 Ω
Resistance3.4 Ω
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time18 ns
Turn-On Delay Time7 ns
Dimensions
Height1.9 mm
Length6.7 mm
Width3.7 mm