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描述
由其分销商提供的 STMicroelectronics STN1HNK60 的描述。
STN1HNK60 N-CHANNEL MOSFET TRANSISTOR, 0.4 A, 600 V, 3 + TAB-PIN SOT-223
N-CHANNEL 600V 8 Ohm 0.4A SOT-223 SUPERMESH MOSFET
Power MOSFET, N Channel, 600 V, 400 mA, 8.5 Ohm, SOT-223, 4 Pins, Surface Mount
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=600 V, 400 mA, SOT-223, , 3
Power MOSFET Transistors 600V 8Ohm 1A N-Chnnl SUPERMESH MOSFET
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:500Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.3W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STN1HNK60.
N-CHANNEL 600V-8 OHM-1A SOT-223 SUPERMESH POWER MOSFET Power Field-Effect Transistor, 0.4A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 400 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 8.5 / Gate-Source Voltage V = 30 / Fall Time ns = 25 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)400 mA
Current Rating400 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance8.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance156 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation3.3 W
Rds On Max8.5 Ω
Resistance8.5 Ω
Rise Time5 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time19 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)600 V
Dimensions
Height1.82 mm
Length6.5 mm
Width3.5 mm