Infineon BSP135H6327XTSA1

Power MOSFET, N Channel, 600 V, 120 mA, 45 Ohm, SOT-223, 4 Pins, Surface Mount

Single N-Channel 600 V 45 Ohm 3.7 nC SIPMOS® Small Signal Mosfet - SOT-223

Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101

1.8W 20V 1V 3.7nC@ 5V 1N 600V 45¦¸@ 10V 120mA 98pF@ 25V SOT-223-4 , 6.5mm*3.5mm*1.6mm

MOSFET, N-CH, 600V, 0.12A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1.4

Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 20 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 182 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = Surface Mount / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.8